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  GPDR3257 rectifier diode voltage up to 3000 v average current 2570 a surge current 30 ka blocking characteristics characteristic conditions v rrm repetitive peak reverse voltage 3000 v v rsm non-repetitive peak reverse voltage 3100 v i rrm repetitive peak reverse current, max. v rrm , single phase, half wave, tj = tjmax 150 ma forward characteristics i f(av) average forward current sine wave,180 conduction, th = 55c 2570 a i f(rms) r.m.s. forward current sine wave,180 conduction, th = 55c 4037 a i fsm surge forward current non rep. half sine wave, 50 hz, v r = 0 v, t j = t jmax 30 ka i2t i2 t for fusing coordination 4500 ka2s v f(to) threshold voltage t j = t jmax 0.95 v r f forward slope resistance t j = t jmax 0.23 m ? v fm peak forward voltage, max forward current i f = 5000 a, tj = 25c 1.9 v switching characteristics q rr rverse recovery charge, typ t j = t jmax , i f = 2000 a, di/dt = -5 a/s c i rr reverse recovery current v r = 100 v a t rr reverse recovery time s v fp forward recovery voltage t j = t jmax , di/dt = a/s v thermal and mechanical characteristics r th(j-c) thermal resistance (junction to case) double side cooled 0.016 c/w r th(c-h) thermal resistance (case to heatsink) double side cooled 0.001 c/w t jmax max operating junction temperature 160 c t stg storage temperature -40 / 160 c f clamping force 10% 30 kn mass 1400 g document GPDR3257t001 value gps - green power semiconductors spa factory: via ungaretti 10, 16157 genova, italy phone: +39-010-667 8800 fax: +39-010-667 8812 web: www.gpsemi.it e-mail: info@gpsemi.it green power semiconductors
rectifier diode GPDR3257 document GPDR3257t001 maximum surge current d.s. cooled 0 5 10 15 20 25 30 35 1 10 100 number of cycle current pulses [n] i fsm [a] green power semiconductors thermal impedance (j-c) 0.000 0.002 0.004 0.006 0.008 0.010 0.012 0.014 0.016 0.018 0.001 0.01 0.1 1 10 100 time [s] z th(j-c) [c / w] forward voltage drop 0 1000 2000 3000 4000 5000 6000 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 v f [v] i f [a] tj=tjmax current rating - sine wave 40 80 120 160 200 0 1000 2000 3000 i f [a] case temperature [c] 180 90 120 60 30 power loss - sine wave 0 1000 2000 3000 4000 5000 6000 7000 0 1000 2000 3000 i f [a] p f [w] 180 120 90 60 30 i n the interest of product improvement green power semiconductors reserves the right to change any specification given in this data sheet without notice. dimensions mm


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